Description: Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description: Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 200 W Maximum Drain-Source Voltage 'Vds': 55 V Maximum Gate-Source Voltage 'Vgs': 20 V Maximum Gate-Threshold Voltage 'Vgs(th)': 4 V Maximum Drain Current 'Id': 110 A Maximum Junction Temperature (Tj): 175 °C Total Gate Charge (Qg): 146(max) nC Rise Time (tr): 101 nS Drain-Source Capacitance (Cd): 781 pF Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm Package Included: 20 x IRF3205 IR MOSFET N-CHANNEL HEXFET Power Transistor
Price: 9.4 USD
Location: Addison, Illinois
End Time: 2024-03-10T23:18:08.000Z
Shipping Cost: N/A USD
Product Images
Item Specifics
Return shipping will be paid by: Seller
All returns accepted: Returns Accepted
Item must be returned within: 30 Days
Refund will be given as: Money Back
Mounting Style: Through-Hole
Bundle Description: 20pcs IRF3205 IR MOSFET N-CHANNEL TO-220 Transistor
Custom Bundle: No
Package/Case: TO-220
MPN: IRF3205
Transistor Category: Power Transistor
Modified Item: No
Brand: International Rectifier
Function: Power Transistor
Series: IRF3205
Type: N-Channel Enhancement Mode MOSFET
Transistor Type: N-Channel JFET
Model: MOSFET
Packaging: Tube
Number of Pins: 3
Maximum Power Dissipation: 200W
