Description: Description: Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 150 W Maximum Drain-Source Voltage 'Vds': 200 V Maximum Gate-Source Voltage 'Vgs': 20 V Maximum Gate-Threshold Voltage 'Vgs(th)': 4 V Maximum Drain Current 'Id': 18 A Maximum Junction Temperature (Tj): 175 °C Total Gate Charge (Qg): 67 nC Rise Time (tr): 19 nS Drain-Source Capacitance (Cd): 185 pF Maximum Drain-Source On-State Resistance (Rds): 0.15 Ohm Package: TO-220 RoHS Compliant: Yes Package Included: 10pcs IRF640N "IR" Power MOSFET N-Channel 18A 200V Transistor to-220
Price: 9.89 USD
Location: Villa Park, Illinois
End Time: 2024-07-27T21:56:27.000Z
Shipping Cost: N/A USD
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Item Specifics
Return shipping will be paid by: Seller
All returns accepted: Returns Accepted
Item must be returned within: 30 Days
Refund will be given as: Money Back
Brand: International Rectifier
Mounting Style: Through-Hole
Function: Power Transistor
Series: IRF640
Type: N-Channel Enhancement Mode MOSFET
Model: MOSFET
Packaging: Bag
Number of Pins: 3
Package/Case: TO-220
MPN: IRF640N
Transistor Category: Power Transistor
